2SC2625 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,400V,80W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2625
DESCRIPTION
·With TO-3PN package
·High voltage,high speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
450
400
7
10
3
80
150
-55~150
UNIT
V
V
V
A
A
W
MAX
1.55
UNIT
/W