2SC2555 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,400V,80W)

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(I) package
·High collector breakdown voltage
V_CEO=400V(Min)
·Excellent switching times
: t_r=1.0µs(Max.) t_f=1.0µs(Max.)@ I_C=4A
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2555
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC
Collector current-DC
ICM
Collector current-peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
500
400
7
8
10
4
2.5
80
150
-55~150
UNIT
V
V
V
A
A
A
W