2SC2552 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High collector breakdown voltage
: V_CEO=400V(Min)
·Excellent switching time
: t_r=1.0µs(Max.)
: t_f=1.0µs(Max.@I_C=0.8A
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2552
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
500
400
7
2
0.5
1.5
20
150
-55~150
UNIT
V
V
V
A
A
W