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2SC2335F Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2335F
DESCRIPTION
·With TO-220F package
·Collector-emitter sustaining voltage
VCEO(sus)=400V(Min)
·Collector-emitter saturation voltage
VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A
·Switching time-tf=1.0µs(Max.)@IC=3.0A
APPLICATIONS
·Designed for use in high-voltage ,high-
speed ,power switching in inductive circuit,
particularly suited for 115 and 220V switch-
mode applications such as switching
regulator’s ,inverters,,DC-DC and converter
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
500
400
7
7
15
3.5
40
150
-50~150
UNIT
V
V
V
A
A
A
W