2SC2270 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2270
DESCRIPTION
·With TO-126 package
·Low collector saturation voltage
·High collector power dissipation
APPLICATIONS
·Strobo flash applications
·Medimum power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IE
IEM
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Emitter current (DC)
Emitter current-peak
PC
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
50
20
8
5
8
-5
-8
1.0
10
150
-55~150
UNIT
V
V
V
A
A
A
A
W