2SC2075 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2075
DESCRIPTION
·With TO-220 package
·High transition frequency
·Wide area of safe operation
APPLICATIONS
·27MHz power amplifier applications
·Recommended for output stage application
of AM 4W transmitter
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
IE
PC
Tj
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
80
80
4
4
-4
10
150
-55~150
UNIT
V
V
V
A
A
W