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| 2SC1173 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS) | |||
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1173
DESCRIPTION
·With TO-220 package
·Complement to type 2SA473
·Collector current :IC=3A
·Collector dissipation:PC=10W@TC=25?
APPLICATIONS
·Low frequency power amplifier
·Power regulator
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25? )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC
Collector current (DC)
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25?
VALUE
30
30
5
3
10
150
-55~150
UNIT
V
V
V
A
W
?
?
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