2SB975 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB975
DESCRIPTION
·With TO-220 package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·Low frequency power amplification
·Low speed power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
-100
-100
-5
-8
40
1.5
150
-55~150
UNIT
V
V
V
A
W