2SB757 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB757
DESCRIPTION
·With TO-3PN package
·High collector current
·Wide area of safe operation
·Complement to type 2SD847
APPLICATIONS
·Audio amplifications
·Serie regulators
·General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
IB
Base current
PC
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
TC=25
VALUE
-40
-40
-5
-15
-5
80
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
1.56
UNIT
/W