2SB755 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – 2SB755

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB755
DESCRIPTION
·With MT-200 package
·Complement to type 2SD845
·High transition frequency
·High breakdown voltage :V_CEO=-150V(min)
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
·
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collectorl power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-150
-150
-5
-12
-1.2
120
150
-55~150
UNIT
V
V
V
A
A
W