2SB677 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB677
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·High power switching applications
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
IB
PC
Tj
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-60
-40
-5
-3
-0.2
25
150
-55~150
UNIT
V
V
V
A
A
W