2SB655 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB655
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-160
-160
-6
-12
-20
100
150
-40~150
UNIT
V
V
V
A
A
W