2SB649 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB649 2SB649A
DESCRIPTION
·With TO-126 package
·Complement to type 2SD669/669A
·High breakdown voltage V_CEO:-120/-160V
·High current -1.5A
·Low saturation voltage,excellent h_FE linearity
APPLICATIONS
·For low-frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SB649
2SB649A
Open emitter
VCEO
Collector-emitter voltage
2SB649
2SB649A
Open base
VEBO
IC
ICM
PD
Tj
Tstg
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Total power dissipation
Junction temperature
Storage temperature
Open collector
Ta=25
TC=25
VALUE
-180
-180
-120
-160
-5
-1.5
-3
1
20
150
-55~150
UNIT
V
V
V
A
A
W