2SB601 Datasheet, PDF (1/3 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB601
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For low-frequency power amplifier and
low-speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current-DC
ICM
Collector current-Pulse
IB
Base current-DC
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
T_a=25
VALUE
-100
-100
-7
-5
-8
-0.5
30
1.5
150
-55~150
UNIT
V
V
V
A
A
A
W