2SB1430 Datasheet, PDF (1/3 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1430
DESCRIPTION
·With TO-220F package
·High DC current gain.
·Low collector saturation voltage.
·DARLINGTON
APPLICATIONS
·Ideal for motor drivers and solenoid drivers
In such as OA and FA equipment
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
-100
-100
-7
-5
-10
-0.5
20
2
150
-55~150
UNIT
V
V
V
A
A
A
W