2SB1429 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATION

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1429
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD2155
APPLICATIONS
·Power amplifier applications
·Recommend for 100W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-180
-180
-5
-15
-1.5
150
150
-55~150
UNIT
V
V
V
A
A
W