2SB1411 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1411
DESCRIPTION
·With TO-220F package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·Switching applications
·Hammer drive ,pulse motor drive applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-100
-100
-7
-2
-3
-0.5
20
UNIT
V
V
V
A
A
A
W
150
-55~150