2SB1367 Datasheet, PDF (1/4 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1367
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2059
·Low collector saturation voltage:
V_CE(sat)=-2.0V(Max) at I_C=-4A,I_B=-0.4A
·Collector power dissipation:
P_C=30W(T_C=25 )
APPLICATIONS
·With general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
IB
PC
Tj
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-100
-100
-5
-5
-0.5
30
150
-55~150
UNIT
V
V
V
A
A
W