2SB1286 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1286
DESCRIPTION
·With TO-220C package
·Complement to type 2SD1646
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
and power driver applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector; connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
IC
PC
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-100
-100
-7
-2
25
150
-55~150
UNIT
V
V
V
A
W