2SB1103 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon PNP Triple Diffused

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1103
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC durrent gain
·Low collector saturation voltage
·Complement to type 2SD1603
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
VALUE
-60
-60
-7
-8
-12
40
150
-55~150
UNIT
V
V
V
A
A
W