2SB1101 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1101
DESCRIPTION
·With TO-220 package
·Complement to type 2SD1601
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-60
-60
-7
-4
-8
40
150
-55~150
UNIT
V
V
V
A
A
W