2SB1018A Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1018A
DESCRIPTION
·With TO-220F package
·High collector current
·Low collector saturation voltage
·Complement to type 2SD1411A
APPLICATIONS
·Power amplifier applications
·High current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector -emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
IB
Base current
TC=25
PC
Collector power dissipation
Ta=25
Tj
Junction temperature
Tstg
Storage temperature
VALUE
-100
-80
-5
-7
-1
30
2
150
-55~150
UNIT
V
V
V
A
A
W