2SA1217 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1217
DESCRIPTION
·With TO-126 package
·Complement to type 2SC2877
·Good linearity of h_FE
APPLICATIONS
·Audio frequency power amplifier
·Low speed switching
·Suitable for output stage of 5 watts
car radio and car stereo
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
IB
PD
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
VALUE
-40
-40
-5
-3
-1
10
150
-55~150
UNIT
V
V
V
A
A
W