2SA1129 Datasheet, PDF (1/3 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1129
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2654
·Low collector saturation votage
APPLICATIONS
·For low-frequency power amplifiers and
mid-speed switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-peak
IB
Base current (DC)
PT
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
-30
-30
-7
-7
-15
-3.5
40
1.5
150
-55~150
UNIT
V
V
V
A
A
A
W