2SA1093 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1093
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SC2563
·High transition frequency
APPLICATIONS
·Audio frequency power amplifier
applicatios
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
IB
PT
Tj
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-5
-8
-0.8
80
150
-55~150
UNIT
V
V
V
A
A
W