2N6676 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,175W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6676 2N6677 2N6678
DESCRIPTION
·With TO-3 package
·High voltage capability
·Fast switching speeds
·Low saturation voltage
APPLICATIONS
Designed for high voltage switching
applications such as :
·Off-line power supplies
·Converter circuits
·Pulse width modulated regulators
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6676
VCBO
Collector-base voltage
2N6677
2N6678
2N6676
VCEO
Collector-emitter voltage 2N6677
2N6678
VEBO
IC
ICM
IB
PT
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tc=25
VALUE
450
550
650
300
350
400
8
15
20
5
175
200
-65~200
UNIT
V
V
V
A
A
A
W