2N6499 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6499
DESCRIPTION
·With TO-220C package
·High breakdown voltage
APPLICATIONS
·Designed for high voltage inverters,
switching regulators and line operated
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
450
350
6
5
10
2
80
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
1.56
UNIT
/W