2N6496 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6496
DESCRIPTION
·With TO-3 package
·High collector current rating
·High power dissipation capability
·Wide area of safe operation
APPLICATIONS
·For switching and amplifier circuits in
Industrial and commercial applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
150
110
7
15
5
140
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.25
UNIT
/W