2N6475 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6475 2N6476
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·General-purpose medium power for
switching and amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N6475
2N6476
Open emitter
VCEO
Collector-emitter voltage
2N6475
2N6476
Open base
VEBO
IC
IB
PT
Tj
Tstg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
-110
-130
-100
-120
-5
-4
-2
40
150
-65~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
3.125
UNIT
/W