2N6470 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6470 2N6471 2N6472
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
·High gain at high current
APPLICATIONS
·General-purpose types of switching
and linear-amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6470
VCBO
Collector-base voltage 2N6471
2N6472
2N6470
VCEO
Collector-emitter voltage 2N6471
2N6472
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
50
70
90
40
60
80
5
15
5
125
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.4
UNIT
/W