2N6469 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6469
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
·High gain at high current
APPLICATIONS
·General-purpose of switching and
linear-amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-50
-40
-5
-15
-5
125
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.4
UNIT
/W