2N6436 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,200W)

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6436 2N6437 2N6438
DESCRIPTION
·With TO-3 package
·High DC current gain
·Fast switching times
·Low collector saturation voltage
·Complement to type 2N6338~2N6341
APPLICATIONS
·For use in industrial-military power amplifier
and switching circuit applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
F
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6436
VCBO
Collector-base voltage 2N6437
2N6438
2N6436
VCEO
Collector-emitter voltage 2N6437
2N6438
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IBC
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-100
-120
-140
-80
-100
-120
-6
-25
-50
-10
200
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
0.875
UNIT
/W