2N6386 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(65W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6386 2N6387 2N6388
DESCRIPTION
·With TO-220C package
·Complement to type 2N6666/6667/6668
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·Designed for general-purpose amplifier
and low speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
2N6386
VCBO
Collector-base voltage
2N6387
2N6388
Open emitter
2N6386
VCEO
Collector-emitter voltage 2N6387
Open base
2N6388
VEBO
IC
Emitter-base voltage
Collector current-DC
Open collector
2N6386
2N6387/6388
ICM
Collector current-Pulse
IB
Base current-DC
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25
VALUE
40
60
80
40
60
80
5
8
10
15
0.25
65
150
-65~150
UNIT
V
V
V
A
A
A
W