2N6383 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,100W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6383 2N6384 2N6385
DESCRIPTION
·With TO-3 package
·Complement to type 2N6648/6649/6650
·DARLINGTON
·High DC current gain
APPLICATIONS
·Designed for low and medium frequency
power application such as power switching
audio amplifer ,hammer drivers and shunt
and series regulators
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6383
VCBO
Collector-base voltage 2N6384
2N6385
2N6383
VCEO
Collector-emitter voltage 2N6384
2N6385
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Collector current-peak
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
40
60
80
40
60
80
5
10
15
0.25
100
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.75
UNIT
/W