2N6372 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·Designed for switching and wide-band
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N6372 2N6373 2N6374
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6372
VCBO
Collector-base voltage
2N6373
2N6374
2N6372
VCEO
Collector-emitter voltage 2N6373
2N6374
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
90
70
50
80
60
40
6
6
40
150
-65~200
UNIT
V
V
V
A
W
VALUE
4.37
UNIT
/W