2N6322 Datasheet, PDF (1/3 Pages) Solid States Devices, Inc – 30 AMP NPN HIGH VOLTAGE / HIGH ENERGY 200 VOLTS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6322
DESCRIPTION
·With TO-3 package
·High current and high power capability
·Low collector saturation voltage
APPLICATIONS
·For use in high current ,high
power applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
300
200
5
30
10
200
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
0.5
UNIT
/W