2N6315 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(7.0A,90W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6315 2N6316
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Complement to type 2N6317/6318
APPLICATIONS
·Designed for general-purpose power
amplifier and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6315
2N6316
VCEO
Collector-emitter voltage
2N6315
2N6316
VEBO
IC
ICM
IB
PD
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
60
80
60
80
5
7
15
2
90
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.94
UNIT
/W