2N6312 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6312 2N6313 2N6314
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Low leakage current
APPLICATIONS
·Designed for general-purpose power
amplifier and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6312
VCBO
Collector-base voltage 2N6313
2N6314
2N6312
VCEO
Collector-emitter voltage 2N6313
2N6314
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-40
-60
-80
-40
-60
-80
-5
-5
-10
-2
75
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
2.32
UNIT
/W