2N6306 Datasheet, PDF (1/3 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·Designed for high voltage inverters,
switching regulators,line operated amplifiers,
and switching power supplies applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Product Specification
2N6306
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tc=25
VALUE
500
250
8
8
4
125
200
-65~200
UNIT
V
V
V
A
A
W