2N6302 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6302
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain @I_C=8A
APPLICATIONS
·Designed for use in high power audio
amplifier applications and high voltage
switching regulator circuits
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tc=25
VALUE
140
140
7
16
20
5
150
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
0.875
UNIT
/W