2N6263 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6263 2N6264
DESCRIPTION
·With TO-66 package
·High breakdown voltage
·Low collector saturation voltage
APPLICATIONS
·A wide variety of medium-to-high power,
high-voltage applications
·Series and shunt regulators
·High-fidelity amplifiers
·Power switching circuits
·Solenoid drivers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6263
2N6264
VCEO
Collector-emitter voltage
2N6263
2N6264
VEBO
IC
ICM
IB
PT
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
2N6263
2N6264
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
140
170
120
150
7
3
4
2
20
50
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
2N6263
2N6264
MAX
8.75
3.5
UNIT
/W