2N6259 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(16A,150V,150W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6259
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·Designed for high power audio ,disk head
positioners,linear amplifiers,switching reg-
ulators solenoid drivers,and DC-DC conv-
erters or inverters
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
IBM
Base current-peak
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
170
150
7
16
30
4
15
150
200
-65~200
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.17
UNIT
/W