2N6031 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6031
DESCRIPTION
·With TO-3 package
·Complement to type 2N5631
·High collector sustaining voltage
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For high power audio amplifier and
high voltage switching regulator
circuits applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-140
-140
-7
-16
-20
-5.0
200
150
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
0.875
UNIT
/W