2N6029 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6029 2N6030
DESCRIPTION
·With TO-3 package
·Complement to type 2N5629 2N5630
·High power dissipations
APPLICATIONS
·For high voltage and high power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6029
2N6030
VCEO
Collector-emitter voltage
2N6029
2N6030
VEBO
IC
ICM
IB
PD
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-100
-120
-100
-120
-7
-16
-20
-5.0
200
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
0.875
UNIT
/W