2N5885 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5885 2N5886
DESCRIPTION
·With TO-3 package
·Complement to type 2N5883 2N5884
·High power dissipations
APPLICATIONS
·They are intended for use in power linear
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5885
2N5886
VCEO
2N5885
Collector-emitter voltage
2N5886
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
60
80
60
80
5
25
50
7.5
200
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
0.875
UNIT
/W