2N5881 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Complement to type 2N5879 2N5880
APPLICATIONS
·For general-purpose power amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N5881 2N5882
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5881
2N5882
VCEO
Collector-emitter voltage
2N5881
2N5882
VEBO
IC
ICM
IB
PD
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
60
80
60
80
5
15
30
5
160
150
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.1
UNIT
/W