2N5879 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,160W)

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5879 2N5880
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Complement to type 2N5881 2N5882
APPLICATIONS
·For general-purpose power amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5879
2N5880
VCEO
Collector-emitter voltage
2N5879
2N5880
VEBO
IC
ICM
IB
PD
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-5
-15
-30
-5
160
150
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.1
UNIT
/W