2N5875 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,150W)

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5875 2N5876
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Complement to type 2N5877 2N5878
APPLICATIONS
·For general-purpose power amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5875
2N5876
VCEO
Collector-emitter voltage
2N5875
2N5876
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-5
-10
-20
-4
150
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.17
UNIT
/W