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2N5871 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5871 2N5872
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5871
2N5872
VCEO
Collector-emitter voltage
2N5871
2N5872
VEBO
Emitter-base voltage
IC
Collector current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-5
-7
115
150
-65~200
UNIT
V
V
V
A
W
VALUE
1.17
UNIT
/W