2N5869 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5869 2N5870
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N5869
2N5870
Open emitter
VCEO
Collector-emitter voltage
2N5869
2N5870
Open base
VEBO
IC
PD
Emitter-base voltage
Collector current
Total Power Dissipation
Open collector
TC=25
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
60
80
60
80
5
5
87.5
150
-65~200
UNIT
V
V
V
A
W
VALUE
1.17
UNIT
/W